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The small-signal resistance (i.e., dVB/dID) in k? offered by the n-channel MOSFET M shown in the figure below, at a bias point of VB = 2 V is (device data for M: device transconductance parameter kN = µn C'OX (W/L) = 40 µA/V2 threshold voltage VTN = 1 V, and neglect body effect and channel length modulation effects)

🗓 Dec 5, 2021

Answer is "25"

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Courtney 🌐 India
Hello, please post an solution as well
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Caroline 🌐 India
Nice website
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