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Assertion
(A): In CE connection of n-p-ntransistor.
VCE ispositive.
Reason (R): In BJT, the base collector junction is reverse biased
A is false but R is true
Both A and R are true and R is correct explanation of A
A is true but R is false
Both A and R are true but R is not a correct explanation of A
Resistivity is a property of a semiconductor that depends on
the atomic number of the semiconductor
the atomic weight of the semiconductor
the atomic nature of the semiconductor
the shape of the semiconductor
The derating factor for a BJT transistor is about
0.5 mW/°C
25 mW/°C
2.5 mW/°C
10 mW/°C
In a bipolar junction transistor adc = 0.98, ICO= 2 μA and 1B = 15 μA. The collector current IC is
635 mA
735 mA
935 mA
835 mA
Which of the following is the ferric electric material
Potassium dihydrogen phosphate
Barium titanate
Rochelle salt
All of the above
Greatest mobility can be expected in case of
protons
negative ions
electrons
holes
Which of these has a layer of intrinsic semiconductor
Zener diode
Schottky diode
PIN diode
Photo diode
An ideal Op-amp is an ideal
current controlled current source
voltage controlled current source
current controlled voltage source
voltage controlled voltage source
A bistable multivibrator
None of the above
has two stable state
has no stable state
has one stable state
In P-N junction, the region containing the uncompensated acceptor and donor ions is called
depletion region
transition zone
Active region
neutral region
Which of the following could be the maximum current rating of junction diode by 126
10 Å
20 A
1 A
100 A
An LED has a rating of 2 V and 10 mA. It is used along with 6Vbattery.
The range of series resistance is
400 Ω and above
0 to 200 Ω
200 - 400 Ω
200 Ω and above
A sample of N type semiconductor has electron density of 6.25 x 108/cm2 at 300 K. If the intrinsic concentration of carriers in this sample is 2.5 x 1013/cm3 at this temperature, the hole density works out to be
106/cm3
108/cm3
10l2/cm3
1010/cm3
Barkhausen criterion of oscillation is
Aβ ≤ 1
Aβ = 1
Aβ = < 1
Aβ > 1
A long specimen of P type semiconductor material
acts as a dipole
is electrically neutral
is + vely charged
has an electric field directed along its length
Which of the following pairs of semiconductors and current carriers is correctly matched
Intrinsic : number of electrons = number of holes
Bulk : neither electrons nor holes
P type : number of electrons > number of holes
N type : number of electrons < number of holes
What happens when forward bias is applied to a junction diode
Minority carrier current is reduced to zero
Majority carrier current is reduced to zero
Potential barrier is decreased
Potential barrier is increased
A Darlington emitter follower circuit is some times used in the output stage of a TTL gate in order to
increase its speed of operation
reduce power dissipation
reduce its I0H
increase its IQL
If too large current passes through the diode
excessive heat may damage the diode
all electrons will leave
diode will emit light
all holes will freeze
An extrinsic semiconductor sample has 6 billion silicon atoms and 3 million pentavalent impurityatoms.
The number of electrons and holes is
3 million each
6 billion each
3 million holes and very small number of free electrons
3 million free electrons and very small number of holes
1
2
19
37
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