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Assertion
(A): In CE connection of n-p-ntransistor.
VCE ispositive.
Reason (R): In BJT, the base collector junction is reverse biased
A is true but R is false
A is false but R is true
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
Resistivity is a property of a semiconductor that depends on
the shape of the semiconductor
the atomic number of the semiconductor
the atomic nature of the semiconductor
the atomic weight of the semiconductor
The derating factor for a BJT transistor is about
2.5 mW/°C
10 mW/°C
0.5 mW/°C
25 mW/°C
In a bipolar junction transistor adc = 0.98, ICO= 2 μA and 1B = 15 μA. The collector current IC is
635 mA
935 mA
735 mA
835 mA
Which of the following is the ferric electric material
All of the above
Barium titanate
Rochelle salt
Potassium dihydrogen phosphate
Greatest mobility can be expected in case of
negative ions
electrons
protons
holes
Which of these has a layer of intrinsic semiconductor
Zener diode
PIN diode
Schottky diode
Photo diode
An ideal Op-amp is an ideal
current controlled voltage source
voltage controlled current source
voltage controlled voltage source
current controlled current source
A bistable multivibrator
None of the above
has one stable state
has no stable state
has two stable state
In P-N junction, the region containing the uncompensated acceptor and donor ions is called
transition zone
depletion region
Active region
neutral region
Which of the following could be the maximum current rating of junction diode by 126
1 A
20 A
10 Å
100 A
An LED has a rating of 2 V and 10 mA. It is used along with 6Vbattery.
The range of series resistance is
200 - 400 Ω
0 to 200 Ω
400 Ω and above
200 Ω and above
A sample of N type semiconductor has electron density of 6.25 x 108/cm2 at 300 K. If the intrinsic concentration of carriers in this sample is 2.5 x 1013/cm3 at this temperature, the hole density works out to be
10l2/cm3
108/cm3
1010/cm3
106/cm3
Barkhausen criterion of oscillation is
Aβ = 1
Aβ ≤ 1
Aβ = < 1
Aβ > 1
A long specimen of P type semiconductor material
has an electric field directed along its length
is electrically neutral
acts as a dipole
is + vely charged
Which of the following pairs of semiconductors and current carriers is correctly matched
Intrinsic : number of electrons = number of holes
P type : number of electrons > number of holes
N type : number of electrons < number of holes
Bulk : neither electrons nor holes
What happens when forward bias is applied to a junction diode
Potential barrier is increased
Minority carrier current is reduced to zero
Majority carrier current is reduced to zero
Potential barrier is decreased
A Darlington emitter follower circuit is some times used in the output stage of a TTL gate in order to
reduce its I0H
reduce power dissipation
increase its speed of operation
increase its IQL
If too large current passes through the diode
all holes will freeze
excessive heat may damage the diode
all electrons will leave
diode will emit light
An extrinsic semiconductor sample has 6 billion silicon atoms and 3 million pentavalent impurityatoms.
The number of electrons and holes is
3 million free electrons and very small number of holes
3 million holes and very small number of free electrons
6 billion each
3 million each
1
2
19
37
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