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A phosphorous doped silicon semiconductor ( doping density: 1017/cm3) is heated from 100oC to 200oC. Which one of the following statements is CORRECT

🗓 Jul 16, 2024

Answer is "Position of Fermi level moves towards middle of energy gap"

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92 votes
Abigail 🌐 India
Please please explain this answer to me
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92 votes
Andrea 🌐 India
I'm in exam, can any one give the solution for this question
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